Technical information
- Parallel plate reactive ion etching system.
- Plasma excitation: RF (13.56 MHz), Max power: 600W
- Process gases: CF4, CHF3, SF6, O2 and Ar.
- Min Pressure: 10mTorr.
- 8" max wafer diameter.
- Intellevation LEP400 laser interferometric etch depth monitor and end point detector.
- Main Application: Etching Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.
Tool Overview
Responsible: Amirreza Ghassami
Location: Room Q158, EVA-Lab (Cleanroom Level 1)
License and Booking Required: Yes
Model: Sirus T2 Table-top RIE
Supplier: Trion Technology.
Responsible staff:
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