ICP-RIE - APEX SLR - Cl based

• Inductively coupled plasma reactive ion etching (ICP-RIE).
• Plasma excitation: ICP (2MHz, 1kW) and RF (13.56MHz, 300W).
• Process gases: Cl2, BCl3, CH4, Ar, O2 and H2.
• Process pressure: 3 - 100 mTorr. 
• 8" max wafer diameter. Standard config. for 2" wafer clamping.
• Substrate Temperature control: -40°C to 170°C..
• He back side cooling.
• Optical emission spectroscopy (OES) endpoint detection system.
• Main application: Controlled nanoscale etching  and atomic layer etching (ALE) of III-V semiconductors, Si, metals and polymers with chlorine-based chemistry.

Location: Room Q258, Cluster Tool room (Level 2)

License and Booking Required: Yes

Supplier: Plasma-Therm LLC

Model: APEX SLR