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titleTechnical information
  • Plasma Enhanced CVD system (PECVD)
  • Deposition of SiO2, Si3N4 and a-Si
  • RF power: 0-400 W
  • ICP power: 0-1300 W
  • Temperatures: RT to 300°C
  • Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O
  • He for substrate heat transfer
  • Maximum wafer size: 4"



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titleTool Overview

Responsible:  Peter Blomqvist & Sungyoun Ju user-44815

Location: Room Q258 - Level 2 Nano-epitaxy

License and Booking Required: Yes



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titleDocumentation

User Manuals

Process

Staff Documents



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titleOther Links

Safety Information

View on LIMS

FAQ

User Discussion Forum