• Plasma Enhanced CVD system (PECVD)
• Deposition of SiO₂, Si₃N₄ and a-Si
• RF power: 0-400 W
• ICP power: 0-1300 W
• Temperatures: RT to 300°C
• Gases available: Ar, SiH₄, NH₃, N₂, O₂, NF₃, N₂O
• He for substrate heat transfer
• Maximum wafer size: 4"

Responsible: user-44815

Location: Room Q258 - Level 2 Nano-epitaxy

License and Booking Required: Yes

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