Technical information
- Plasma Enhanced CVD system (PECVD)
- Deposition of SiO2, Si3N4 and a-Si
- RF power: 0-400 W
- ICP power: 0-1300 W
- Temperatures: RT to 300°C
- Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O
- He for substrate heat transfer
- Maximum wafer size: 4"
Tool Overview
Documentation