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• Plasma Enhanced CVD system (PECVD)
• Main Application: Deposition of SiO₂, Si₃N₄ and a-Si
• Etching of SiNx, SiO2 and Si layers in NF3/Ar plasma also possible
• RF power: 0-400W, 400 W
• ICP power: 0-1300W,1300 W
• Temperatures: RT to 300°C
• Gases available: Ar, SiH4SiH₄,  NH3NH₃, N2N₂, O2O₂, NF3, N2O eventually CHF3NF₃, N₂O
• He for substrate heat transfer.
• Maximum wafer size: 4"

Responsible:  Peter Blomqvist & Sungyoun Ju user-44815

Location: Room Q258 - Level 2 Nano-epitaxy

License and Booking Required: Yes

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