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  • Plasma Enhanced CVD system (PECVD)
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Tool Summary

  • Tool Responsible: Peter Blomqvist & Sungyoun Ju

  • Location: LNL Q25X

  • License required: Yes 

    • Tool information:
    • Deposition of SiO2, Si3N4 and a-Si

  • FAQ

    • RF power: 0-400 W
    • ICP power: 0-1300 W
    • Temperatures: RT to 300°C
    • Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O
    • He for substrate heat transfer
    • Maximum wafer size: 4"



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    titleTool Overview

    Responsible: user-44815

    Location: Room Q258 - Level 2 Nano-epitaxy

    License and Booking Required: Yes



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    titleDocumentation
    Safety

    User Manuals

    Process

    Staff Documents

        



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    Safety Information

    View on LIMS

    FAQ

    User Discussion Forum