Technical information
- Main application: Rapid Thermal Processing (RTP)
- Available gases: N2, O2 or forming gas (20% of H2 + 80% of N2).
- 4" max wafer diameter, wafer carrier available.
- Temperature dependent time limits
- T < 400°C: 60 min
- 400°C < T < 600°C : 30 min
- 600°C < T < 800°C: 15 min
- 800°C < T < 1000°C: 5 min
- Max temperature ramp up rate is 150°C/s.
- Up to 100 steps programmable processes.
Tool Overview
Responsible: Dmitry Suyatin
Location: Room Q158, EVA-Lab (Cleanroom Level 1)
License and Booking Required: Yes
Model and supplier: RTP-1200-100 from UniTemp GmbH.
Documentation
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