MOCVD is a process for manufacturing complex semiconductor multilayer structures used in electronic or optoelectronic components such as LEDs, lasers, highspeed transistors or solar cells. Unlike the better-known Silicon (used in the production of computer chips, for example), these semiconductors consist of not just one element, but rather of two or even more. They are therefore referred to as “compound semiconductors”. They include Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Nitride (GaN) and related alloys. They are also called “III-V semi conductors” because they are made from elements of group III and V of the Periodic Table and can interact to form crystalline compounds. Compound semiconductors have significant advantages over Silicon. Because electrons can move very fast in III-V materials, those devices containing III-V semiconductors can “process” the very high frequencies in mobile phones, for example. Moreover, they can also function even at very high temperatures. Most importantly, they are highly efficient at converting light into electric power and vice-versa – this is what high-performance solar cells and all LEDs are based on. 

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