Technical information
- Inert atmospheric processes (N2 or H2)
- Maximum reactor temperature below ?°
- Process pressure is 100 mbar
- Available process gases: AsH3, HBr, H2S, PH3
- Metal organic source materials: TMGa,TMAl, DEZn and TESn
- In-situ HBr etching capability
- Available susceptor sizes: 1x2”
- N2 inert gas atmosphere glove box attached
- Main application: Synthesis of III-V-based one-dimensional nanostructures as e.g. GaAs, InAs, GaP and (Al,Ga)As
Tool Overview
Responsible: Magnus Borgström & Sungyoun Ju
Location: Room Q2XX, Level 2
License and Booking Required: Yes
Documentation