Technical information
- Main Application: Deposition of SiO2, Si3N4 and a-Si
- Etching of SiNx, SiO2 and Si in NF3/Ar plasma also possible
- RF power: 0-400 W
- ICP power: 0-1300 W
- Temperatures: RT to 300°C
- Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O eventually CHF3
- He for substrate heat transfer
- Maximum wafer size: 4"
Tool Overview
Responsible: Peter Blomqvist & Sungyoun Ju
Location: Room Q258 - Level 2 Nano-epitaxy
License and Booking Required: Yes
Documentation
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