Technical information
- Plasma excitation: MW (2.45 GHz, up to 1000W).
- Process gases: O2, Ar and CF4.
- Isotropic etching with minimum ion damage to samples.
- Water cooled plate.
- 6" max wafer diameter.
Tool Overview
Responsible: Alexander den Ouden
Location: Room Q231, CBE-Lab outside cleanroom level 2
License and Booking Required: Yes
Main application: planarizing rough sample surfaces, removing thin layers of material
Documentation
User Manuals
Process
Staff Documents
Other Links