Technical information

Main application: Rapid Thermal Processing (RTP) system,
Gases: N2, O2 or forming gas (20% of H2 + 80% of N2). No vacuum.
4" max wafer diameter, wafer carrier available.
Temperature/time limitations: max 60 min for T < 400°C, max 30 min for 400°C < T < 600°C, max 15 min for 600°C < T < 800°C, max 5 min for 800°C < T < 1000°C.
Max temperature ramp up rate is 150°C/s.
Up to 100 steps programmable processes.

Tool Overview

Responsible: Dmitry Suyatin

Location: Room Q158, EVA-Lab (Cleanroom Level 1)

License and Booking Required: Yes

Model and supplier: RTP-1200-100 from UniTemp GmbH.