Technical information
Sputter deposition (PVD) system
Target materials: Au, Al, Ni, Mo, W, Ti, Si, SiO2, TiN, ITO
3 DC magnetrons (2") and 2 RF magnetrons (2")
Gases: Ar, N2, O2
Process chamber base pressure: low 10-7 mbar
- Load-lock for quick and easy sample loading
QCM (Quartz Micro Balance) for monitoring of deposition rate and film thickness
- Maximum wafer size: 4"
Tool Overview
Documentation