Technical information
Metal organic vapor phase epitaxy (MOVPE) CCS is low pressure system dedicated for III-V material synthesis (mainly arsenide and antimonides)
- Close coupled showerhead reactor design equipped with a sacrificial quartz shield
- Inert atmospheric processes (N2 or H2)
- Maximum reactor temperature below 800° (susceptor surface temperature)
- Low pressure MOVPE (commonly between 50 and 800 mbar)
- Available process gases: AsH3, HCl, H2S, Si2H6, PH3 (limited access)
- Metal organic source materials: TMGa, TEGa, TMIn, TMAl, TTBAl, TMSb, TESb, TMBi, DEZn, TESn, DTBSe
- In-situ HCl etching capability
- Available susceptor sizes: 1x 3”, 1x4”, 3x2”
- N2 inert gas atmosphere glove box attached
- EPSION concentration control of almost all metal organic sources
- LayTec system for in-situ reflectometry available
- Main application: Synthesis of III-V-based one-dimensional nanostructures as e.g. GaAs, InAs, InSb, (Al,Ga)As, In(As,Sb)
Tool Overview
Responsible: Sebastian Lehmann & Sungyoun Ju
Location: Room Q2XX, Level 2
License and Booking Required: Yes
Documentation