Technical information
The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas.
- Inert atmospheric processes (N2 or H2)
- Maximum reactor temperature below 800° C
- Process pressure is commonly between 50 and 800 mbar
- Available process gases: AsH3, HBr, H2S, PH3
- Metal organic source materials: TMGa,TMAl, TMIn, DEZn and TESn
- In-situ HBr etching capability
- Sample size for the susceptor is up to 2cm in width, and 5 cm in length.
- N2 inert gas atmosphere glove box attached
- Main application: Synthesis of III-V-based semiconductor materials as e.g. GaAs, InAs, GaP and (Al,Ga)As
Tool Overview
Responsible: Magnus Borgström & Sungyoun Ju
Location: Room Q256, Level 2
License and Booking Required: Yes
Documentation
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