Technical information
The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas.
- The horizontal reactor handle up to 1 x 4 inch or 3 x 2 inch wafers with rotation.
- Laytec in-situ optical monitoring available.
- Susceptor temperature up to 720C.
- Precursors: AsH3, PH3, TBAs, TEGa, TMSb, TMGa, TMIn and TMAl.
- Dopants: SiH4, TMIn, TESn, DEZn, DTBS
- Inert atmospheric processes (N2 or H2)
- Available process gases: AsH3, HCl, SiH4, PH3
- Metal organic source materials: TBAs, TEGa, TMSb, TMGa, TMIn and TMAl, TMIn, TESn, DEZn, DTBS
- In-situ HCl etching capability
- Main application: Synthesis of III-V-based one-dimensional nanostructures as e.g. GaAs, InAs, InSb, (Al,Ga)As, In(As,Sb)
Tool Overview
Responsible: Magnus Borgström & Sungyoun Ju
Location: Room Q256, Level 2
License and Booking Required: Yes
Documentation
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