Technical information
- Inductively coupled plasma reactive ion etching (ICP-RIE) system Apex SLR from Advanced Vacuum Systems AB.
- Plasma excitation: ICP (2 MHz, 1 kW) and RF (13.56 MHz, 300 W).
Process gases: SF6, CHF3, CF4, C4F8, Ar, O2, H2, N2.
- Process pressure: 3 - 100 mTorr.
- 8" max wafer diameter. Standard configuration for 4" wafer clamping.
- Temperature control of substrate: -30°C to 150°C.
He back side cooling.
Equipped with an optical emission spectroscopy (OES) endpoint detection system.
- Main application: Controlled nanoscale etching of Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.
Tool Overview
Responsible: Dmitry Suyatin
Location: Room Q156, EBL-Lab (Cleanroom Level 1)
License and Booking Required: Yes
Documentation
Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).
Wafer clamps for 2 inch, 6 inch and 8 inch wafers are also available.
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