Technical information
- Inductively coupled plasma reactive ion etching (ICP-RIE).
- Plasma excitation: ICP (2MHz, 1kW) and RF (13.56MHz, 300W).
Process gases: SF6, CHF3, CF4, C4F8, Ar, O2, H2, N2.
- Process pressure: 3 - 100 mTorr.
- 8" max wafer diameter. Standard configuration for 4" wafer clamping.
- Temperature control of substrate: -30°C to 150°C.
- He back side cooling.
Optical emission spectroscopy (OES) endpoint detection system.
- Main application: Controlled nanoscale etching of Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.
Tool Overview
Responsible: Luke Hankin
Location: Room Q156, EBL-Lab (Cleanroom Level 1)
License and Booking Required: Yes
Supplier: Plasma-Therm / Advanced Vacuum Systems AB
Documentation