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Tool Summary

  • Tool Responsible: Dmitry Suyatin

  • Location:  Q158 (Level 1 - EVA room)

  • License Required: Yes

  • Booking Compulsory: Yes

  • Tool Information:




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titleTechnical information
  • Parallel plate reactive ion etching system. 
  • Plasma excitation: RF (13.56 MHz), Max power: 600W
  • Process gases: CF4, CHF3, SF6, O2 and Ar. 
  • Min Pressure: 10mTorr.
  • 8" max wafer diameter.
  • Intellevation LEP400 laser interferometric etch depth monitor and end point detector.

  • Main Application: Etching

Table-top Reactive Ion Etching (RIE) system Sirus T2 Plus from Trion Technology. The system is designed for etching

  • Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.


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titleTool Overview

Responsible: user-44815

Location: Room Q158, EVA-Lab (Cleanroom Level 1)

License and Booking Required: Yes

Model:  Sirus T2 Table-top RIE

Supplier: Trion Technology.


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titleDocumentation

User Manuals

Process

Staff Documents



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Safety Information 

View on LIMS

FAQ

User Discussion Forum



Info

Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

In total, 5 gases available: CF4, CHF3, SF6, O2 and Ar. Up to 8 inch wafer substrate size.

No wafer clamping.

Room temperature processing

. Plasma excitation: RF (13.56 MHz, up to 600W). Process pressure down to 10 mTorr. The system is equipped with Intellevation LEP400 laser interferometric etch depth monitor and end point detector.

Safety

User Manuals

Process

Staff Documents

     View on LIMS

    

only.