• Inert atmospheric processes (N₂ or H₂)
• Maximum reactor temperature below 800° C
• Process pressure is commonly between 50 and 800 mbar
• Metal organic source materials: TMGa,TMAl, TMIn, DEZn and TESn
• In-situ HBr etching capability
• Sample size for the susceptor is up to 2cm in width, and 5 cm in length.
• N₂ inert gas atmosphere glove box attached
• Main application: Synthesis of III-V-based semiconductor materials as e.g. GaAs, InAs, GaP and (Al,Ga)As
• Main application: Large area exposure of regular patterns
• Gratings, square or hexagonal dot arrays
• Monochromatic pulsed excimer laser (193nm wavelenth) 
• Resolution below 100nm, Maximum pitch approx. 1.5µm.
• 4" max wafer diameter
• Exposure insensitive to uneven surface.

Responsible:  Sungyoun Magnus Borgström & Sungyoun Ju

Location: Room Q2XXQ248, Level 2

License and Booking Required: Yes

User Manuals

Process

Staff Documents

Safety Information 

View on LIMS

FAQ

User Discussion Forum