• Inductively coupled plasma reactive ion etching (ICP-RIE).
• Plasma excitation: ICP (2MHz, 1kW) and RF (13.56MHz, 300W).

• Process gases: SF₆, CHF₃, CF₄, C₄F₈, Ar, O₂, H₂, N₂.

• Process pressure: 3 - 100 mTorr. 
• 8" max wafer diameter. Standard configuration for 4" wafer clamping.
• Temperature control of substrate: -30°C to 150°C.
• He back side cooling.

• Optical emission spectroscopy (OES) endpoint detection system.

• Main application: Controlled nanoscale etching of Si, SiO₂, Si₃N₄, W, Mo and polymers (resists) with fluorine-based chemistry.

Responsible: Luke Hankin 

Location: Room Q156, EBL-Lab (Cleanroom Level 1)

License and Booking Required: Yes

Supplier: Plasma-Therm / Advanced Vacuum Systems AB