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The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas.

• The horizontal reactor handle up to 1 x 4 inch or 3 x 2 inch wafers with rotation.  Typically a 1x2” susceptor is used.
• Laytec in-situ optical monitoring available. Not usable for 3x2 inch susceptor.
• Inert atmospheric processes (N₂ or H₂)
• Maximum reactor temperature below 800° C
• Process pressure is commonly between 50 and 800 mbar
• Available process gases: AsH₃, HBr, H₂S, PH₃
• Susceptor temperature up to 720C.
• Precursors:  TEGa, TMGa, TMIn and TMAl
• Dopants: SiH4, TESn, DEZn, DTBS
• Inert atmospheric processes (N₂ or H₂)Metal organic source materials: TMGa,TMAl, TMIn, DEZn and TESn
• In-situ HBr HCl etching capability
• Sample size for the susceptor is up to 2cm in width, and 5 cm in length.
• N₂ inert gas atmosphere glove box attached
• Main application: Synthesis of III-V-based semiconductor materials as materials as e.g. GaAs, InAs, GaP and , (Al,Ga)As

Responsible: Magnus Borgström & Sungyoun Ju

Location: Room Q256, Level 2

License and Booking Required: Yes

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