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The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas.

• The horizontal reactor handle up to 1 x 4 inch or 3 x 2 inch wafers with rotation.  Typically a 1x2” susceptor is used.
• Laytec in-situ optical monitoring available. Not usable for 3x2 inch susceptor.
• Process pressure is commonly between 50 and 800 mbar
• Susceptor temperature up to 720C.
• Precursors: AsH3, PH3, TBAs,   TEGa, TMSb, TMGa, TMIn and TMAl.
• Dopants: SiH4, TMIn, TESn, DEZn, DTBS
• Inert atmospheric processes (N₂ or H₂)Main applications: Growth of GaAs, InGa, GaP ....
• In-situ HCl etching capability
• Main application: Synthesis of III-V-based semiconductor materials as e.g. GaAs, InAs, GaP, (Al,Ga)As

Responsible: Magnus Borgström & Sungyoun Ju

Location: Room Q256, Level 2

License and Booking Required: Yes

User Manuals

Process

Staff Documents

Safety

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