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The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
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The reactor has a laminar flow design, which avoids turbulences in the gas phase. This results in precise control of material composition and atomically sharp interfaces.
· Flexible and extendable systems with modular set up of components
· Low consumption of process gases
· High degree of flexibility of process relevant components
· Wide spectra to grow different layers
· Excellent quality of the grown layers
· Particle free due to uncoupled rotation
· Extremely high layer uniformity due to rotation of the substrate under the gas
flow
· High reproducibility of layer/structure characteristics, like uniformity, which
results from the laminar flow field in combination with the rotation of the
substrate holder
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Responsible: Magnus Borgström & Sungyoun Ju Location: Room Q256, Level 2 License and Booking Required: Yes |
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User ManualsProcessStaff Documents |
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SafetyView on LIMSFAQUser Discussion Forum |
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