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Inert atmospheric processes (N₂ or H₂)
Maximum reactor temperature below ?° 800° C
Process pressure is 100 mbarAvailable process gases: AsH₃, HBr, H₂S, PH₃commonly between 50 and 800 mbar
Metal organic source materials: TMGa,TMAl, TMIn, DEZn and TESn
In-situ HBr etching capability
Available susceptor sizes: 1x2”Sample size for the susceptor is up to 2cm in width, and 5 cm in length.
N₂ inert gas atmosphere glove box attached
Main application: Synthesis of III-V-based one-dimensional nanostructuressemiconductor materials as e.g. GaAs, InAs, GaP and (Al,Ga)As

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Responsible: Magnus Borgström & Sungyoun Ju

Location: Room Q2XXQ248, Level 2

License and Booking Required: Yes

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