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changes.mady.by.user Sarah McKibbin

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  • Inductively coupled plasma reactive ion etching (ICP-RIE) system Apex SLR from Advanced Vacuum Systems AB.
  • Plasma excitation: ICP (2 MHz2MHz, 1 kW1kW) and RF (13.56 MHz56MHz, 300 W300W).

  • Process gases: SF6, CHF3, CF4, C4F8, Ar, O2, H2, N2.

  • Process pressure: 3 - 100 mTorr. 
  • 8" max wafer diameter. Standard configuration for 4" wafer clamping.
  • Temperature control of substrate: -30°C to 150°C.
  • He back side cooling.

  • Equipped with an optical Optical emission spectroscopy (OES) endpoint detection system.

  • Main application: Controlled nanoscale etching of Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.


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titleTool Overview

Responsible: Dmitry Suyatin Luke Hankin 

Location: Room Q156, EBL-Lab (Cleanroom Level 1)

License and Booking Required: Yes

Supplier: Plasma-Therm / Advanced Vacuum Systems AB

   


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titleDocumentation

User Manuals

Process

Staff Documents

Info

Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

Wafer clamps for 2 inch, 6 inch and 8 inch wafers are also available.



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Safety Information 

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FAQ

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