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Close coupled showerhead reactor design equipped with a sacrificial quartz shield



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titleTechnical information
  • Inert atmospheric processes (N2 or H2)
  • Maximum reactor temperature below
800° (susceptor surface temperature)
  • 800° C
  • Process pressure is
Low pressure MOVPE (
  • commonly between 50 and 800 mbar
)Available process gases: AsH3, HCl, H2S, Si2H6, PH3 (limited access)
  • Metal organic source materials: TMGa,
TEGa
  • TMAl, TMIn
, TMAl, TTBAl, TMSb, TESb, TMBi
  • , DEZn
,
  • and TESn
, DTBSe
  • In-situ
HCl
  • HBr etching capability
Available susceptor sizes: 1x 3”, 1x4”, 3x2”
  • Sample size for the susceptor is up to 2cm in width, and 5 cm in length.
  • N2 inert gas atmosphere glove box attached
  • EPSION concentration control of almost all metal organic sources
    • LayTec system for in-situ reflectometry available
    • Main application: Synthesis of III-V-based
    one-dimensional nanostructures
    • semiconductor materials as e.g. GaAs, InAs,
    InSb,
    • GaP and (Al,Ga)As
    , In(As,Sb)


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    titleTool Overview

    Responsible: Magnus Borgström & Sungyoun Ju

    Location: Room Q2XXQ248, Level 2

    License and Booking Required: Yes


        


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    titleDocumentation

    User Manuals

    Process

    Staff Documents



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    titleOther Links

    Safety Information 

    View on LIMS

    FAQ

    User Discussion Forum


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