The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas. - The horizontal reactor handle up to 1 x 4 inch or 3 x 2 inch wafers with rotation. Typically a 1x2” susceptor is used.
- Laytec in-situ optical monitoring available. Not usable for 3x2 inch susceptor.
- Process pressure is commonly between 50 and 800 mbar
- Susceptor temperature up to 720C.
- Precursors: TEGa, TMGa, TMIn and TMAl
- Dopants: SiH4, TESn, DEZn, DTBS
- Inert atmospheric processes (N2 or H2)
- In-situ HCl etching capability
- Main application: Synthesis of III-V-based semiconductor materials as e.g. GaAs, InAs, GaP, (Al,Ga)As
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