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Responsible: Bengt Meuller

Location: Room Q 256

License and Booking Required: YesMain application:

• Main application: Deposition thin high-k oxide layers
• Materials: HfO, Al2O3
• 8" max wafer diameter
• 3 precursors currently installed:
  
  • Hafnium (TDMAHf, Booster).
  • Water.
  • Aluminum (TMA)
• Plasma excitation: MW (2.45 GHz, up to 1000W).
• Process gases: O2, Ar and CF4.
• Isotropic etching  with minimum ion damage to samples.
• Water cooled plate.
• 6" max wafer diameter.

Staff Documents - Beneq TFS 200 - ALD

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