• Inert atmospheric processes (N₂ or H₂)
• Maximum reactor temperature below 800° C
• Process pressure is commonly between 50 and 800 mbar
• Metal organic source materials: TMGa,TMAl, TMIn, DEZn and TESn
• In-situ HBr etching capability
• Sample size for the susceptor is up to 2cm in width, and 5 cm in length.
• N₂ inert gas atmosphere glove box attached
• Main application: Synthesis of III-V-based semiconductor materials as e.g. GaAs, InAs, GaP and (Al,Ga)As

Responsible: Magnus Borgström &