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title	Technical information

Plasma Enhanced CVD system (PECVD)
Deposition of SiO₂, Si₃N₄ and a-Si
RF power: 0-400 W
ICP power: 0-1300 W
Temperatures: RT to 300°C
Gases available: Ar, SiH₄, NH₃, N₂, O₂, NF₃, N₂O
He for substrate heat transfer
Maximum wafer size: 4"

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title	Tool Overview

Responsible: ~ftf-pbo & Sungyoun Ju

Location: Room Q258 - Level 2 Nano-epitaxy

License and Booking Required: Yes

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title	Documentation

User Manuals

Process

Staff Documents

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title	Other Links

Safety Information

View on LIMS

FAQ

User Discussion Forum