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The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas.

• The horizontal reactor handle up to 1 x 4 inch or 3 x 2 inch wafers with rotation. 
• Laytec in-situ optical monitoring available.
• Susceptor temperature up to 720C.
• Precursors: AsH3, PH3, TBAs, TEGa, TMSb, TMGa, TMIn and TMAl.
• Dopants: SiH4, TMIn, TESn, DEZn, DTBS
• Inert atmospheric processes (N₂  or H₂)
• Maximum reactor temperature below 800° C
• Process pressure is commonly between 50 and 800 mbar
• Available process gases: AsH₃, HClHBr, SiH4H₂S, PH₃ 
• Metal organic source materials:  TBAs, TEGa, TMSb, TMGa, TMIn and TMAl, TMIn, DEZn and TESn, DEZn, DTBS
• In-situ HCl HBr etching capability
• Sample size for the susceptor is up to 2cm in width, and 5 cm in length.
• N₂ inert gas atmosphere glove box attached
• Main application: Synthesis of III-V-based one-dimensional nanostructures semiconductor materials as e.g. GaAs, InAs, InSb, GaP and (Al,Ga)As, In(As,Sb)

Responsible: Magnus Borgström & Sungyoun Ju

Location: Room Q256, Level 2

License and Booking Required: Yes

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