- Close coupled showerhead reactor design equipped with a sacrificial quartz shield
- Inert atmospheric processes (N2 or H2)
- Maximum reactor temperature below 800° (susceptor surface temperature)
- Low pressure MOVPE (commonly between 50 and 800 mbar)
- Available process gases: AsH3, HCl, H2S, Si2H6, PH3 (limited access)
- Metal organic source materials: TMGa, TEGa, TMIn, TMAl, TTBAl, TMSb, TESb, TMBi, DEZn, TESn, DTBSe
- In-situ HCl etching capability
- Available susceptor sizes: 1x 3”, 1x4”, 3x2”
- N2 inert gas atmosphere glove box attached
- EPSION concentration control of almost all metal organic sources
- LayTec system for in-situ reflectometry available
- Main application: Synthesis of III-V-based one-dimensional nanostructures as e.g. GaAs, InAs, InSb, (Al,Ga)As, In(As,Sb)
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Responsible: Magnus Borgström & Sungyoun Ju Location: Room Q2XX, Level 2 License and Booking Required: Yes |
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User ManualsProcessStaff Documents |
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Safety InformationView on LIMSFAQUser Discussion Forum |
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