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titleTechnical information

The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas.

  • The horizontal reactor handle up to 1 x 4 inch or 3 x 2 inch wafers with rotation. 
  • Laytec in-situ optical monitoring available.
  • Susceptor temperature up to 720C.
  • Precursors: AsH3, PH3, TBAs, TEGa, TMSb, TMGa, TMIn and TMAl.
  • Dopants: SiH4, TMIn, TESn, DEZn, DTBS
  • Main applications: Growth of GaAs, InGa, GaP ....




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titleTool Overview

Responsible: Magnus Borgström & Sungyoun Ju

Location: Room Q256, Level 2

License and Booking Required: Yes



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titleDocumentation

User Manuals

Process

Staff Documents



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titleOther Links

Safety

View on LIMS

FAQ

User Discussion Forum


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