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The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas.

• The horizontal reactor handle up to 1 x 4 inch or 3 x 2 inch wafers with rotation. 
• Laytec in-situ optical monitoring available.
• Susceptor temperature up to 720C.
• Precursors: AsH3, PH3, TBAs, TEGa, TMSb, TMGa, TMIn and TMAl.
• Dopants: SiH4, TMIn, TESn, DEZn, DTBS
• Main applications: Growth of GaAs, InGa, GaP ....

Responsible: Magnus Borgström & Sungyoun Ju

Location: Room Q256, Level 2

License and Booking Required: Yes

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