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titleTechnical information

The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas.·

  • The horizontal reactor
of the AIX 200/4 permits the handling of
  • handle up to 1 x 4

 
  • inch or 3 x 2 inch wafers with
single
  • rotation. 
· Low consumption of process gases
· High degree of flexibility of process relevant components
· Wide spectra to grow different layers
· Excellent quality of the grown layers
· Particle free due to uncoupled rotation
· Extremely high layer uniformity due to rotation of the substrate under the gas
flow
· High reproducibility of layer/structure characteristics, like uniformity, which
results from the laminar flow field in combination with the rotation of the
substrate holder
  • Laytec in-situ optical monitoring available.
  • Susceptor temperature up to 720C.
  • Precursors: AsH3, PH3, TBAs, TEGa, TMSb, TMGa, TMIn and TMAl.
  • Dopants: SiH4, TMIn, TESn, DEZn, DTBS
  • Main applications: Growth of GaAs, InGa, GaP ....




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titleTool Overview

Responsible: Magnus Borgström & Sungyoun Ju

Location: Room Q256, Level 2

License and Booking Required: Yes



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titleDocumentation

User Manuals

Process

Staff Documents



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titleOther Links

Safety

View on LIMS

FAQ

User Discussion Forum


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