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The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
· High degree of flexibility of process relevant components · Wide spectra to grow different layers · Excellent quality of the grown layers · Particle free due to uncoupled rotation · Extremely high layer uniformity due to rotation of the substrate under the gas flow · High reproducibility of layer/structure characteristics, like uniformity, which results from the laminar flow field in combination with the rotation of the substrate holder
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Responsible: Magnus Borgström & Sungyoun Ju Location: Room Q256, Level 2 License and Booking Required: Yes |
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User ManualsProcessStaff Documents |
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SafetyView on LIMSFAQUser Discussion Forum |
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