Page History

 The AIX 200/4 is a system for epitaxial growth of uniform layers of all III-V semiconductors. It can be used in research and development as well as in production
areas. The horizontal reactor of the AIX 200/4 permits the handling of up to 1 x 4
inch wafers with single rotation.  The reactor has a laminar flow design, which avoids turbulences in the gas phase. This results in precise control of material composition and atomically sharp interfaces.
The special features of the AIX 200/4 systems are:
· Flexible and extendable systems with modular set up of components
· High lifetime
· High uptime
· Low running cost
· Low consumption of process gases
· High degree of flexibility of process relevant components
· Wide spectra to grow different layers
· Excellent quality of the grown layers
· Particle free due to uncoupled rotation
· No mechanical feedthrough and therefore higher safety and reliability at the
handling of process gases
· Extremely high layer uniformity due to rotation of the substrate under the gas
flow
· High reproducibility of layer/structure characteristics, like uniformity, which
results from the laminar flow field in combination with the rotation of the
substrate holder