Versions Compared

Old Version 18

changes.mady.by.user Sarah McKibbin

Saved on

compared with

New Version 19

changes.mady.by.user Sarah McKibbin

Saved on

Key

  • This line was added.
  • This line was removed.
  • Formatting was changed.



Panel
borderColor#BFB8AF
bgColorwhite
titleColorBlack
borderWidth2
titleBGColor#DCE9EE
borderStylesolid
titleTechnical information
  • Inductively coupled plasma reactive ion etching (ICP-RIE).
  • Plasma excitation: ICP (2MHz, 1kW) and RF (13.56MHz, 300W).

  • Process gases: SF6, CHF3, CF4, C4F8, Ar, O2, H2, N2.

  • Process pressure: 3 - 100 mTorr. 
  • 8" max wafer diameter. Standard configuration for 4" wafer clamping.
  • Temperature control of substrate: -30°C to 150°C.
  • He back side cooling.

  • Optical emission spectroscopy (OES) endpoint detection system.

  • Main application: Controlled nanoscale etching of Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.


Panel
borderColor#BFB8AF
bgColorwhite
titleColorBlack
borderWidth2
titleBGColor#DCE9EE
borderStylesolid
titleTool Overview

Responsible: Dmitry Suyatin

Location: Room Q156, EBL-Lab (Cleanroom Level 1)

License and Booking Required: Yes

Supplier: Plasma-Therm ? Advanced Vacuum Systems AB

   


Panel
borderColor#BFB8AF
bgColorwhite
titleColorBlack
borderWidth2
titleBGColor#DCE9EE
borderStylesolid
titleDocumentation

User Manuals

Process

Staff Documents



Panel
borderColor#BFB8AF
bgColorwhite
titleColorBlack
borderWidth2
titleBGColor#DCE9EE
borderStylesolid
titleOther Links

Safety Information 

View on LIMS

FAQ

Info

Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

Wafer clamps for 2 inch, 6 inch and 8 inch wafers are also available.