Page History

• Inductively coupled plasma reactive ion etching (ICP-RIE).
• Plasma excitation: ICP (2 MHz, 1 kW) and RF (13.56 MHz, 300 W).

• Process gases: SF₆, CHF₃, CF₄, C₄F₈, Ar, O₂, H₂, N₂.

• Process pressure: 3 - 100 mTorr. 
• 8" max wafer diameter. Standard configuration for 4" wafer clamping.
• Temperature control of substrate: -30°C to 150°C.
• He back side cooling.

• Equipped with an optical emission spectroscopy (OES) endpoint detection system.

• Main application: Controlled nanoscale etching of Si, SiO₂, Si₃N₄, W, Mo and polymers (resists) with fluorine-based chemistry.

Responsible: Dmitry Suyatin

Location: Room Q156, EBL-Lab (Cleanroom Level 1)

License and Booking Required: Yes

Supplier: Plasma-Therm ? Advanced Vacuum Systems AB

User Manuals

Process

Staff Documents

Safety Information 

View on LIMS

FAQ

Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

Wafer clamps for 2 inch, 6 inch and 8 inch wafers are also available.