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titleTechnical information
  • Main Application: Deposition of SiO2, Si3N4 and a-Si
  • Etching of SiNx, SiO2 and Si layers in NF3/Ar plasma also possible
  • RF power 0-400W,
  • ICP power 0-1300W,
  • Temperatures: RT to 300°C
  • Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O eventually CHF3
  • He for substrate heat transfer.
  • Maximum wafer size: 4"


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titleTool Overview

Responsible: Peter Blomqvist & Sungyoun Ju

Location: Room Q258 - Level 2 Nano-epitaxy

License and Booking Required: Yes



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titleDocumentation

User Manuals

Process

Staff Documents



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titleOther Links

Safety Information

View on LIMS

FAQ


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