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Tool Summary



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  • Tool Responsible: Dmitry Suyatin

  • Location:  Q156 (Level 1 - EBL room)

  • License Required: Yes

  • Booking Compulsory: Yes

    • Tool Information:
    • Inductively coupled plasma reactive ion etching (ICP-RIE) system Apex SLR from Advanced Vacuum Systems AB.
    The system is designed for controlled
    • Plasma excitation: ICP (2 MHz, 1 kW) and RF (13.56 MHz, 300 W).

    • Process gases: SF6, CHF3, CF4, C4F8, Ar, O2, H2, N2.

    • Process pressure: 3 - 100 mTorr. 
    • 8" max wafer diameter. Standard configuration for 4" wafer clamping.
    • Temperature control of substrate: -30°C to 150°C.

    • He back side cooling.

    • Equipped with an optical emission spectroscopy (OES) endpoint detection system.

    • Main application: Controlled nanoscale etching of Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.


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    titleTool Overview

    Responsible: Dmitry Suyatin

    Location: Room Q156, EBL-Lab (Cleanroom Level 1)

    License and Booking Required: Yes

       


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    titleDocumentation

    User Manuals

    Process

    Staff Documents


    Info

    Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

    In total, 8 process gases are presently available: SF6, CHF3, CF4, C4F8, Ar, O2, H2, N2. The system is normally configured for clamping 4 inch wafers. He back side cooling.

    Wafer clamps for 2 inch, 6 inch and 8 inch wafers are also available.

    Substrate temperature control: -30°C to 150°C. Plasma excitation: ICP (2 MHz, 1 kW) and RF (13.56 MHz, 300 W). Process pressure: 3 - 100 mTorr. The system is equipped with an optical emission spectroscopy (OES) system for determining process endpoint.



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    titleOther Links

    Safety Information 

    View on LIMS

    FAQ

    Safety

    User Manuals

    Process

    Staff Documents

         View on LIMS