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Tool Summary

  • Tool Responsible: Dmitry Suyatin

  • Location:  Q158 (Level 1 - EVA room)

  • License Required: Yes

  • Booking Compulsory: Yes

  • Tool Information:



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  • Parallel plate RF processing. 
  • Plasma excitation: RF (13.56 MHz), Max power: 600W
  • Min Pressure: 10mTorr
  • Process gases: CF4, CHF3, SF6, O2 and Ar. 
  • 8" max wafer diameter.
  • Equipped with Intellevation LEP400 laser interferometric etch depth monitor and end point detector.
  • Main Application: Etching
Table-top Reactive Ion Etching (RIE) system Sirus T2 Plus from Trion Technology. The system is designed for etching
  • Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.
  • Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).
In total, 5 gases available: CF4, CHF3, SF6, O2 and Ar. Up to 8 inch wafer substrate size.
  • No wafer clamping.
  • Room temperature processing
. Plasma excitation: RF (13.56 MHz, up to 600W). Process pressure down to 10 mTorr. The system is equipped with Intellevation LEP400 laser interferometric etch depth monitor and end point detector.


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Reactive Ion Etching (RIE) system Sirus T2 Plus from Trion Technology

Responsible: Dmitry Suyatin

Location: Room Q158, EVA-Lab (Cleanroom Level 1)

License and Booking Required: Yes

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titleDocumentation
Safety

User Manuals

Process

Staff Documents



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Safety Information 

View on LIMS

    

FAQ