Technical information
- Parallel plate RF processing.
- Plasma excitation: RF (13.56 MHz), Max power: 600W
- Min Pressure: 10mTorr
- Process gases: CF4, CHF3, SF6, O2 and Ar.
- 8" max wafer diameter.
- Equipped with Intellevation LEP400 laser interferometric etch depth monitor and end point detector.
Main Application: Etching Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.
Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).
No wafer clamping.
Room temperature processing only.
Tool Overview
Reactive Ion Etching (RIE) system Sirus T2 Plus from Trion Technology
Responsible: Dmitry Suyatin
Location: Room Q158, EVA-Lab (Cleanroom Level 1)
License and Booking Required: Yes
Documentation
Documentation
Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).
No wafer clamping.
Room temperature processing only.
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