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Technical information
  • Parallel plate reactive ion etching system. 
  • Plasma excitation: RF (13.56 MHz), Max power: 600W
  • Process gases: CF4, CHF3, SF6, O2 and Ar. 
  • Min Pressure: 10mTorr.
  • 8" max wafer diameter.
  • Intellevation LEP400 laser interferometric etch depth monitor and end point detector.
  • Main Application: Etching Si, SiO2, Si3N4, W, Mo and polymers (resists) with fluorine-based chemistry.


Tool Overview

Responsible: Dmitry Suyatin

Location: Room Q158, EVA-Lab (Cleanroom Level 1)

License and Booking Required: Yes

Model:  Sirus T2 Table-top RIE

Supplier: Trion Technology.

Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

No wafer clamping.

Room temperature processing only.





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