Tool Overview
Responsible: Amirreza Ghassami
Location: Room Q258, Nano-epitaxy (Cleanroom Level 2)
License and Booking Required: Yes
Main application:
Technical information
- Plasma Enhanced CVD system (PECVD)
- Deposition of SiO2, Si3N4 and a-Si
- HF (13.56 MHz) power: 0-1600 W
- LF power (300 kHz): 0- 500 W
- Temperatures: 100 to 300°C
- Gases available: H2, SiH4, NH3, N2, O2, C4F8, N2O
- Maximum wafer size: 8"
Documentation
Documents for the tool
Other Links