Technical information
- Main application: Resist stripping, isotropic etching Si, SiO2 & SiNx.
- Plasma excitation: MW (2.45 GHz, up to 1000W).
- Process gases: O2, Ar and CF4.
- Isotropic etching with minimum ion damage to samples.
- Water cooled plate.
- 6" max wafer diameter.
Tool Overview
Responsible: Sarah McKibbin and Alex den Ouden
Location: Room Q156, EBL-Lab (Cleanroom Level 1)
License and Booking Required: Yes
Documentation