Technical information
  • Inductively coupled plasma reactive ion etching (ICP-RIE).
  • Plasma excitation: ICP (2MHz, 1kW) and RF (13.56MHz, 300W).

  • Process gases: Cl2, BCl3, CH4, Ar, O2 and H2.

  • Process pressure: 3 - 100 mTorr. 
  • 8" max wafer diameter. Standard config. for 2" wafer clamping.
  • Substrate Temperature control: -40°C to 170°C..

  • He back side cooling.

  • Optical emission spectroscopy (OES) endpoint detection system.

  • Main application: Controlled nanoscale etching  and atomic layer etching (ALE) of III-V semiconductors, Si, metals and polymers with chlorine-based chemistry.
Tool Overview

Responsible: Luke Hankin 

Location: Room Q258, Cluster Tool room (Level 2)

License and Booking Required: Yes

Supplier: Plasma-Therm LLC

Model: APEX SLR


Documentation

User Manuals

Process

Staff Documents

Other Links

Safety Information

View on LIMS

FAQ

User Discussion Forum

Unprotected surfaces of the following materials are not allowed: glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and certain types of polymers (e.g. silicones).

Wafer clamps for 4 inch, 6 inch and 8 inch wafers are also available.





  • No labels