Tool Overview
Responsible: Amirreza Ghassami
Location: Room Q258, Nano-epitaxy (Cleanroom Level 2)
License and Booking Required: Yes
Main application: Hard mask for device fabrication and a high-k (high-dielectric-constant) material for electronic and photonics applications
Technical information
- Plasma Enhanced CVD system (PECVD)
- Deposition of SiO2, Si3N4 and a-Si
- HF (13.56 MHz) power: 0-1600 W
- LF (375 kHz) power: 0- 500W
- Temperatures: 120 to 300°C
- Gases available: H2, SiH4, NH3, N2, O2, C4F8, N2O
- Maximum wafer size: 8"
Documentation
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