Metal organic vapor phase epitaxy (MOVPE) CCS is low pressure system dedicated for III-V material synthesis (mainly arsenide and antimonides)

  • Close coupled showerhead reactor design equipped with a sacrificial quartz shield
  • Inert atmospheric processes (N2 or H2)
  • Maximum reactor temperature below 800° (susceptor surface temperature)
  • Low pressure MOVPE (commonly between 50 and 800 mbar)
  • Metal organic source materials: TMGa, TEGa, TMIn, TMAl, TTBAl, TMSb, TESb, TMBi, DEZn, TESn, DTBSe
  • In-situ HCl etching capability
  • Available susceptor sizes: 1x 3”, 1x4”, 3x2”
  • N2 inert gas atmosphere glove box attached
  • EPSION concentration control of almost all metal organic sources
  • LayTec system for in-situ reflectometry available
  • Main application: Synthesis of III-V-based one-dimensional nanostructures as e.g. GaAs, InAs, InSb, (Al,Ga)As, In(As,Sb)

 

Responsible: Sebastian  Lehmann & Sungyoun Ju

Location: Room Q252, Level 2 

License and Booking Required: Yes


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